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W987D2HBJX6E TR

Part No :

W987D2HBJX6E TR

Manufacturer
Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Catalog
Memory
DataSheet
W987D2HBJX6E TR PDF
Unit Price
詢價QQ咨詢
Stock Num
0
Min Qty
2500
Package
Tape & Reel (TR)

W987D2HBJX6E TR Specifications

Type Description
rohs: RoHS
technology: SDRAM - Mobile LPSDR
access time: 5.4 ns
memory size: 128Mb (4M x 32)
memory type: Volatile
part status: Not For New Designs
memory format: DRAM
mounting type: Surface Mount
package / case: 90-TFBGA
clock frequency: 166 MHz
memory interface: Parallel
voltage - supply: 1.7V ~ 1.95V
operating temperature: -25°C ~ 85°C (TC)
supplier device package: 90-VFBGA (8x13)
write cycle time - word, page: 15ns
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