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CYD09S18V18-200BBXC

Part No :

CYD09S18V18-200BBXC

Manufacturer
Rochester Electronics
Description
IC SRAM 9MBIT PARALLEL 256FBGA
Catalog
Memory
DataSheet
CYD09S18V18-200BBXC PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
339
Min Qty
3
Package
Tray,Tray

CYD09S18V18-200BBXC Specifications

Type Description
rohs: RoHS
technology: SRAM - Dual Port, Synchronous
access time: 3.3 ns
memory size: 9Mb (512K x 18)
memory type: Volatile
part status: Obsolete
memory format: SRAM
mounting type: Surface Mount
package / case: 256-LBGA
clock frequency: 200 MHz
memory interface: Parallel
voltage - supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
operating temperature: 0°C ~ 70°C (TA)
supplier device package: 256-FBGA (17x17)
write cycle time - word, page: -
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