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NAND01GW3B2CZA6E

Part No :

NAND01GW3B2CZA6E

Manufacturer
Micron Technology
Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Catalog
Memory
DataSheet
NAND01GW3B2CZA6E PDF
Unit Price
詢價QQ咨詢
Stock Num
0
Min Qty
1
Package
Tray

NAND01GW3B2CZA6E Specifications

Type Description
rohs: RoHS
technology: FLASH - NAND
access time: 25 ns
memory size: 1Gb (128M x 8)
memory type: Non-Volatile
part status: Obsolete
memory format: FLASH
mounting type: Surface Mount
package / case: 63-TFBGA
clock frequency: -
memory interface: Parallel
voltage - supply: 2.7V ~ 3.6V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 63-VFBGA (9.5x12)
write cycle time - word, page: 25ns
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