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MT53D512M64D4SB-046 XT ES:E

Part No :

MT53D512M64D4SB-046 XT ES:E

Manufacturer
Micron Technology
Description
IC DRAM 32GBIT 2133MHZ FBGA
Catalog
Memory
DataSheet
MT53D512M64D4SB-046 XT ES:E PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
0
Min Qty
1
Package
Tray

MT53D512M64D4SB-046 XT ES:E Specifications

Type Description
rohs: RoHS
technology: SDRAM - Mobile LPDDR4
access time: -
memory size: 32Gb (512M x 64)
memory type: Volatile
part status: Active
memory format: DRAM
mounting type: -
package / case: -
clock frequency: 2.133 GHz
memory interface: -
voltage - supply: 1.1V
operating temperature: -30°C ~ 105°C (TC)
supplier device package: -
write cycle time - word, page: -
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