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2ED2110S06MXUMA1

Part No :

2ED2110S06MXUMA1

Manufacturer
Infineon Technologies
Description
LEVEL SHIFT SOI
Catalog
PMIC - Gate Drivers
DataSheet
2ED2110S06MXUMA1 PDF
Unit Price
詢價QQ咨詢
Stock Num
0
Min Qty
1
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel?

2ED2110S06MXUMA1 Specifications

Type Description
rohs: RoHS
gate type: IGBT, N-Channel MOSFET
input type: Non-Inverting
part status: Active
channel type: Independent
mounting type: Surface Mount
package / case: 16-SOIC (0.295", 7.50mm Width)
voltage - supply: 10V ~ 20V
number of drivers: 2
driven configuration: High-Side and Low-Side
operating temperature: -40°C ~ 125°C (TA)
rise / fall time (typ): 25ns, 17ns
supplier device package: 16-SOIC
logic voltage - vil, vih: 6V, 14V
high side voltage - max (bootstrap): 650 V
current - peak output (source, sink): 2.5A, 2.5A
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